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| NSBC114EDXV6T1, NSBC114EDXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EDXV6T1 series, two BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium. Features (3) R1 Q1 Q2 R2 (4) R1 (5) NSBC114EDXV6T1 (6) http://onsemi.com (2) R2 (1) * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count Lead-Free Solder Plating These are Pb-Free Devices 1 MARKING DIAGRAM MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc SOT-563 CASE 463A PLASTIC xx M G 1 xx = Device Code (Refer to Page 2) M = Date Code G = Pb-Free Package THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation; TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation; TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad ORDERING INFORMATION Symbol PD RqJA Symbol PD RqJA TJ, Tstg Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) -55 to +150 Unit mW mW/C C/W Unit mW mW/C C/W C NSBC1xxxDXV6T5G SOT-563* 8000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb-Free. Device NSBC1XXXDXV6T1 Package Shipping SOT-563* 4000/Tape & Reel NSBC1XXXDXV6T1G SOT-563* 4000/Tape & Reel NSBC1xxxDXV6T5 SOT-563* 8000/Tape & Reel DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 1 May, 2006 - Rev. 6 Publication Order Number: NSBC114EDXV6/D NSBC114EDXV6T1, NSBC114EDXV6T5 DEVICE MARKING, ORDERING, AND RESISTOR VALUES Device NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC144EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 (Note 2) NSBC143TDXV6T1 (Notes 2) NSBC113EDXV6T1 (Note 2) NSBC123EDXV6T1 (Notes 2) NSBC143EDXV6T1 (Notes 2) NSBC143ZDXV6T1 (Notes 2) NSBC124XDXV6T1 (Notes 2) NSBC123JDXV6T1 (Note 2) NSBC115EDXV6T1 (Notes 2) NSBC144WDXV6T1 (Notes 2) Package* SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 Marking 7A 7B 7C 7D 7E 7F 7G 7H 7J 7K 7L 7M 7N 7P R1 (kW) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 R2 (kW) 10 22 47 47 1.0 2.2 4.7 47 47 47 100 22 The "G'' suffix indicates Pb-Free package available. *This package is inherently Pb-Free. 2. New resistor combinations. Updated curves to follow in subsequent data sheets. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC144EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC115EDXV6T1 NSBC144WDXV6T1 ICBO ICEO IEBO - - - - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 - - nAdc nAdc mAdc Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% V(BR)CBO V(BR)CEO Vdc Vdc http://onsemi.com 2 NSBC114EDXV6T1, NSBC114EDXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (Continued) Characteristic ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC144EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC115EDXV6T1 NSBC144WDXV6T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 - 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 - - - - - - - - - - - - - - - 0.25 Vdc Symbol Min Typ Max Unit Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) NSBC113EDXV6T1/NSBC123EDXV6T1 (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) NSBC114TDXV6T1/NSBC143TDXV6T1 NSBC143EDXV6T1/NSBC143ZDXV6T1/NSBC124XDXV6T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC144EDXV6T1 NSBC115EDXV6T1 NSBC144WDXV6T1 VCE(sat) VOL - - - - - - - - - - - - - - VOH NSBC113EDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC143ZDXV6T1 NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC144EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC115EDXV6T1 NSBC144WDXV6T1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6 4.9 - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - Vdc (VCC = 5.0 V, (VCC = 5.0 V, (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) VB = 5.5 V, RL = 1.0 kW) VB = 4.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Vdc Input Resistor kW Resistor Ratio NSBC114EDXV6T1/NSBC124EDXV6T1/ NSBC144EDXV6T1/NSBC115EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1/NSBC143TDXV6T1 NSBC113EDXV6T1/NSBC123EDXV6T1/NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC144WDXV6T1 R1/R2 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 NSBC114EDXV6T1, NSBC114EDXV6T5 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 -50 RqJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve http://onsemi.com 4 NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS -- NSBC114EDXV6T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 25C 0.1 75C 1000 VCE = 10 V TA = 75C 25C -25C 0.01 0.001 hFE , DC CURRENT GAIN (NORMALIZED) 50 100 0 20 40 IC, COLLECTOR CURRENT (mA) 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 75C 10 1 0.1 0.01 25C TA = -25C C ob, CAPACITANCE (pF) 3 2 1 VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS -- NSBC124EDXV6T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 1 IC/IB = 10 TA = -25C 25C 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 0.1 100 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 10 1 0.1 0.01 75C 25C TA = -25C C ob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 25C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 6 NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS -- NSBC144EDXV6T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 1 TA = -25C 0.1 25C 75C 100 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 0.8 C ob , CAPACITANCE (pF) 0.6 0.4 0.2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 75C 10 1 0.1 25C TA = -25C 0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS -- NSBC114YDXV6T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 75C 300 250 200 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 VCE = 10 TA = 75C 25C -25C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 NSBC114EDXV6T1, NSBC114EDXV6T5 PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE F D -X- A L 4 6 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 1 2 3 E -Y- HE DIM A b C D E e L HE e b 6 PL 5 0.08 (0.003) C M XY SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.0 0.0394 1.35 0.0531 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 9 NSBC114EDXV6/D |
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